[10p-PB4-1~23] 3.13 Semiconductor optical devices

[10p-PB4-2] Tailoring of 1550nm-band InAs quantum dot intermixed regions by in-wafer adjustment of ion implantation depth

〇(M1)Syohei Isawa¹, Yota Akashi¹, Atsushi Matsumoto², Akanane Kouichi², Matsushima Yuichi³, Ishikawa Hiroshi¹, Utaka Katsuyuki¹ (1.Waseda Univ., 2.NICT, 3.GCS, Waseda Univ.)

Keywords:semiconductor, quantum dot