[10p-PB5-1~55] 17 Nanocarbon Technology (Poster)

[10p-PB5-55] Fabrication of MoTe2-tunneling FET device

〇Hidemitsu Ouchi¹, Kota Kamiya¹, Kohei Sakanashi¹, Thomas Guehenneux¹, Peter Kruger¹, Jonathan Bird², Kenji Watanabe³, Takashi Taniguchi³, Nobuyuki Aoki¹ (1.Chiba Univ., 2.SUNY Buffalo, 3.NIMS)

Keywords:Transition metal dichalcogenide