[INVITED] Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography

Kazuo Tsutsui; Tomohiro Matsushita; Kotaro Natori; Takayuki Muro; Yoshitada Morikawa; Takuya Hoshii; Kuniyuki Kakushima; Hitoshi Wakabayashi; Kouichi Hayashi; Fumihiko Matsui; Toyohiko Kinoshita

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[10p-S221-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Sun. Mar 10, 2019 1:45 PM - 5:00 PM S221 (S221)

Toshifumi Irisawa(AIST), Ken Uchida(Univ. Tokyo)

2:30 PM - 3:00 PM

[10p-S221-3] [INVITED] Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography

〇Kazuo Tsutsui¹, Tomohiro Matsushita², Kotaro Natori¹, Takayuki Muro², Yoshitada Morikawa³, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kouichi Hayashi⁴, Fumihiko Matsui⁵, Toyohiko Kinoshita² (1.Tokyo Tech, 2.JASRI, 3.Osaka Univ., 4.Nagoya Inst. Tech., 5.Inst. Molecular Science)

Keywords:photoelectron holography, dopant, imaging