The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

12 Organic Molecules and Bioelectronics » 12.4 Organic light-emitting devices and organic transistors

[10p-S222-1~15] 12.4 Organic light-emitting devices and organic transistors

Sun. Mar 10, 2019 1:45 PM - 6:00 PM S222 (S222)

Takashi Nagase(Osaka Pref. Univ.), Takeo Minari(NIMS)

2:00 PM - 2:15 PM

[10p-S222-2] Melt-processing of highly crystalline organic semiconducting layers for organic optoelectronics

JeanCharles Maurice Ribierre1,2, Zhao Li1,2, Masanobu Uchiyama3,4, Tetsuya Aoyama4, Anthony D'Aleo5, Fabrice Mathevet6, Chihaya Adachi1,2 (1.OPERA, Kyushu Univ., 2.JST-ERATO, 3.University of Tokyo, 4.RIKEN, 5.CNRS-UMI, 6.Sorbonne University)

Keywords:organic semiconducting thin film, Melt-processing, organic optoelectronics

Organic semiconductors have been intensively investigated and used in a variety of organic optoelectronic devices such as organic light-emitting diodes (OLEDs), organic lasers, organic solar cells and organic field-effect transistors. A number of different techniques including vacuum vapor deposition and spin-coating have been used to deposit them into thin films. Here, we report on a simple and versatile solvent-free and vacuum-free melt-processing method to fabricate organic layers with large crystal size. For this purpose, we used a solution-processable oligo(p-phenylene vinylene) derivative substituted at both extremities with pyrene moieties. The charge transport, photophysical and amplified spontaneous emission properties of the melt-processed films demonstrate that this fabrication method is suitable for the realization of organic electronic and light-emitting devices.