[10p-W241-1~8] Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

[10p-W241-1] Reliability deterioration phenomenon of metal oxide thin film transistor

〇Yukiharu URAOKA¹, Paolo Bermundo¹, Mami Fujii¹, Mutsunori Uenuma¹, Yasuaki Ishikawa¹ (1.NAIST)

Keywords:Metal Oxide Thin Film, Thin Film Transsistor, Reliability

Metal oxide thin film transistors have been extensively studied as driving elements for realizing the next generation display. For this purpose, it is important not only to improve the performance of the thin film transistor but also to improve the reliability. Compared with conventional silicon thin film transistors, various deterioration phenomena peculiar to oxides have been reported. In this presentation, we introduce degradation mechanism and improvement measures on bias (DC, AC) stress deterioration, degradation due to light irradiation and Joule heat deterioration phenomenon.