[10p-W241-1~8] Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

[10p-W241-3] Composition analysis and FET characteristics of Crystalline Oxide Semiconductor

〇Kenichi Okazaki¹, Toshimitsu Obonai¹, Yasuharu Hosaka¹, Shunpei Yamazaki¹ (1.SEL)

Keywords:oxide semiconductor

The use of crystalline IGZO is important in commercializing products using IGZO, as we reported previously. In this study, we performed a scanning transmission electron microscopy (STEM) observation and an energy dispersive X-ray spectroscopy (EDX) analysis on a crystalline IGZO film to investigate the relationship between IGZO film composition and FET characteristics. The results of the EDX analysis show that In-rich and In-poor regions in an IGZO film have different composition ratios. At the meeting, we will report the composition ratios of IGZO films deposited under different conditions and FET characteristics.