[10p-W321-1~16] 13.9 Compound solar cells

[10p-W321-14] Preparation of Cu₂SnS₃ thin film using mist CVD method

〇Mao Kowata¹, Fumitaka Yosihisa¹, Kunihiko Tanaka¹ (1.Nagaoka Univ. of Tech.)

Keywords:mist CVD, Cu2SnS3(CTS)

Preparation of semiconductor solar cells thin films using non-vacuum process and containing rare metals are causes of high cost. In this research, rare metal free Cu₂SnS₃(CTS) thin films were fabricated using mist chemical vapor deposition (mist CVD) method which don’t require vacuum apparatus. The mist solution was prepared by dissolved Tin chloride(SnCl₄) and Copper chloride(CuCl₂) into pure water as a solvent with 0.4 M. Then, it was deposited on alkali-free glass(Eagle) substrates heated at 400°C to prepare Cu-Sn (CT) precursors. Finally, the prepared CT precursors were heated a sulfur-nitrogen containing atmosphere (H₂S(3%)+N₂) in order to prepare CTS thin films. X-ray powder diffraction (XRD) of the samples demonstrate the presence of the monoclinic phase of CTS with peaks of (200), (131), (-131), and (-333). However, a secondary phase of SnO₂ was observed from samples which deposited around the mist blowout(Upstream). In fact, it is considered that the replacement of Oxide to Sulfur by heating in sulfur-nitrogen containing atmosphere was not succesfully occurred. Therefore, improvement of sulfurization condition is necessary.