[10p-W541-1~20] 15.4 III-V-group nitride crystals

[10p-W541-5] Design and Fabrication of Laterally-coupled Distributed-feedback GaN-based Laser Diodes with 3rd Order Surface Gratings on Pendeo-epitaxy GaN

〇Kenta Takagi¹, Tsuyoshi Ando¹, Yoshiki Morioka², Masahiro Uemukai², Ryuji Katayama², Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.Osaka Univ.)

Keywords:semiconductor

We have designed the laterally coupled DFB lasers based on GaN with third order surface gratings, whose period is 240 nm and whose depth is 100 nm, and fabricated the lasers on Pendeo-epitaxy GaN. By measuring this lasers with optical pumping methods, the threshold excitation power density was found to be 2.2 MW/cm². Also, the emission wavelength shifts with the increase of the excitation power density was only up to 0.1 nm. As a result, we have concluded that the DFB lasers on Pendeo-GaN got a characteristics of gratings' controlling emission wavelength.