Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[10p-W541-1~20] 15.4 III-V-group nitride crystals

Sun. Mar 10, 2019 1:30 PM - 7:00 PM W541 (W541)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Shugo Nitta(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[10p-W541-1] [Young Scientist Presentation Award Speech] Enhancement of luminescence of Eu-doped GaN light-emitting diodes using AlInN/GaN DBR with high reflectance and conductivity

〇Keishi Shiomi¹, Tomohiro Inaba¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

1:45 PM - 2:00 PM

△ [10p-W541-2] Characterization of UV device using TMAH wet etching for mirror formation

〇Shinji Yasue¹, Kosuke Sato^1,2, Yuta Kawase¹, Junya Ikeda¹, Yusuke Sakuragi¹, Sho Iwayama¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,3 (1.Meijo Univ., 2.Asahi-Kasei, 3.Akasaki Research Center, Nagoya Univ.)

2:00 PM - 2:15 PM

[10p-W541-3] High current injection for UV light emitting devices with graded p-AlGaN

〇(D)Kosuke Sato^1,2, Shinji Yasue², Yuya Ogino², Motoaki Iwaya², Tetsuya Takeuchi², Satoshi Kamiyama², Isamu Akasaki^2,3 (1.Asahi-Kasei, 2.Meijo Univ., 3.Nagoya Univ.)

2:15 PM - 2:30 PM

△ [10p-W541-4] Dependence of p-type AlGaN in UV emitters

〇Yuya Ogino¹, Kosuke Sato^1,2, Yuta Kawase¹, Junya Ikeda¹, Shinji Yasue¹, Yusuke Sakuragi¹, Shunya Tanaka¹, Shohei Teramura¹, Sho Iwayama¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,3 (1.Meijo Univ., 2.Asahi-Kasei, 3.Akasaki Reserch Center, Nagoya Univ.)

2:30 PM - 2:45 PM

[10p-W541-5] Design and Fabrication of Laterally-coupled Distributed-feedback GaN-based Laser Diodes with 3rd Order Surface Gratings on Pendeo-epitaxy GaN

〇Kenta Takagi¹, Tsuyoshi Ando¹, Yoshiki Morioka², Masahiro Uemukai², Ryuji Katayama², Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.Osaka Univ.)

2:45 PM - 3:00 PM

[10p-W541-6] Fabrication Process of InGaN Single-Mode Laser Using Periodically Slotted Structure

〇(M1)Daiki Tazuke¹, So Kusumoto¹, Akihiro Higuchi¹, Jumpei Tajima², Toshiki Hikosaka², Shinya Nunoue², Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ., 2.R&D Center, Toshiba Corp.)

3:00 PM - 3:15 PM

[10p-W541-7] Fabrication and optical characteristics of GaN-QPM crystal using double polarity selective area growth

〇Kai Matsuhisa¹, Yuto Kobayashi¹, Atsushi Sugita¹, Yoku Inoue¹, Takayuki Nakano¹ (1.Shizuoka Univ.)

3:15 PM - 3:30 PM

[10p-W541-8] Input Grating Coupler for AlN Optical Waveguide Wavelength Conversion Device

〇(M1)Yoshiki Morioka¹, Shuhei Yamaguchi¹, Kanako Shojiki², Yusuke Hayashi³, Hideto Miyake^2,3, Keishi Shiomi¹, Yasufumi Fujiwara¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Grad.School of Eng., Osaka Univ., 2.Grad.School of Eng., Mie Univ., 3.Grad.School of RIS, Mie Univ.)

3:45 PM - 4:00 PM

[10p-W541-9] Development of Waveguide Mach-Zehnder Interferometer for Quantum Optical Application: Fabricaiton of GaN Strip Waveguide Directional Coupler

〇Junya Miwa¹, Kihira Masafumi¹, Uemukai Masahiro¹, Hikosaka Toshiki², Nunoue Shinya², Katayama Ryuji¹ (1.Grad. School of Eng., Osaka Univ., 2.Corporate R&D Center, Toshiba Corporation)

4:00 PM - 4:15 PM

[10p-W541-10] Development of Waveguide Mach-Zehnder Interferometer for Quantum Optical Application: Fabrication of GaN / n-AlGaN Directional Coupler

〇(M1)Masafumi Kihira¹, Junya Miwa¹, Tenta Komatsu¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Grad. School of Eng., Osaka Univ.)

4:15 PM - 4:30 PM

[10p-W541-11] Development of Waveguide Mach-Zehnder Interferometer for Quantum Optical Application: Electric field control type phase modulator

〇Tenta Komatsu¹, Masahumi Kihira¹, Uemukai Masahiro¹, Katayama Ryuji¹ (1.Grad. School of Eng., Osaka Univ.)

4:30 PM - 4:45 PM

▲ [10p-W541-12] Effect of 4μm-thick Buffer as well as 50% relaxed n-AlGaN Electron Injection Layer on the Performance of 308nm UV-B LED

〇Muhammad Ajmal Khan¹, Noritoshi Maeda¹, Masafumi Jo¹, Yoichi Yamada², Hideki Hirayama¹ (1.RIKEN Center for Advanced Photonics (RAP), 2-1, Hirosawa, Wako, Saitama 351-0198, Japan, 2.Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi, 755-8611, Japan)

4:45 PM - 5:00 PM

△ [10p-W541-13] Fabrication of needle-type blue μLED probe on Si substrate for multipoint light stimulation

〇Hiroki Yasunaga¹, Masahiro Ohsawa², Hiroto Sekiguchi^1,3 (1.Toyohashi Tech, 2.Nagoya city Univ., 3.JST PRESTO)

5:00 PM - 5:15 PM

△ [10p-W541-14] Fabrication of GaN Monolithic Doubly-Resonant Microcavity SHG Device on Si Pedestal Structure

〇(M2)Tomoaki Nambu¹, Takumi Nagata¹, Keishi Shiomi¹, Yasufumi Fujiwara¹, Kazuki Ohnishi², Tomoyuki Tanikawa², Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ., 2.IMR, Tohoku Univ.)

5:15 PM - 5:30 PM

[10p-W541-15] Electrical evaluation of oxide film formed in GaN oxide-formed two-step wet-etching method

〇(M1C)Yasuharu Kiyotou¹, Makie Tetsuo¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo University of Technology, 2.Institute of Industrial Science, the University of Tokyo)

5:45 PM - 6:00 PM

[10p-W541-16] First-principles molecular dynamics study of two-dimensional bilayer GaN

〇Tomoe Yayama¹, Anh Khoa Augustin Lu², Tetsuya Morishita^1,2, Takeshi Nakanishi^1,2 (1.AIST, CD-FMat, 2.AIST, MathAM-OIL)

6:00 PM - 6:15 PM

[10p-W541-17] Ab initio study for adsorption-desorption behavior at step edges of GaN(0001) surface

〇Toru Akiyama¹, Takumi Ohka¹, Kohji Nakamura¹, Tomonori Ito¹ (1.MIe Univ.)

6:15 PM - 6:30 PM

[10p-W541-18] Simulation of a GaN MOVPE Process in a Vertical Crystal Growth Apparatus

〇Takumi Tomizawa¹, Kento Kawakami², Teruo Sakurai², Akira Kusaba³, Naoya Okamoto², Katsunori Yoshimatsu⁴, Yoshiaki Daigo⁵, Ichiro Mizushima^5,6, Takashi Yoda^5,6, Yoshihiro Kangawa³, Koichi Kakimoto³, Kenji Shiraishi⁴ (1.Depertment of Eng., Nagoya Univ., 2.Grad. Sch. of Eng., Nagoya Univ., 3.RIAM, Kyushu Univ., 4.IMaSS, Nagoya Univ., 5.NuFlare Technology, Inc., 6.FIRST, Tokyo Institute of Technology)

6:30 PM - 6:45 PM

[10p-W541-19] Development of GaN Crystal Growth Simulation Method Including Chemical Reaction

〇Soma Sakakibara¹, Kento Kawakami², Subaru Komura², Masaaki Araidai⁴, Akira Kusaba³, Naoya Okamoto², Katunori Yoshimatu⁴, Yoshihiro Kangawa³, Koichi Kakimoto³, Kenji Shiraishi⁴ (1.Department of Eng., Nagoya Univ., 2.Grad. Sch. of Eng., Nagoya Univ., 3.RIAM, Kyushu Univ., 4.IMaSS, Nagoya Univ.)

6:45 PM - 7:00 PM

[10p-W541-20] Three-Dimensional Multiphysics Simulation with GaN Crystal Growth in MOVPE Method

〇Kento Kawakami¹, Subaru Komura¹, Akira Kusaba³, Katsunori Yoshimatsu^2,1, Naoya Okamoto¹, Yoshihiro Kangawa^3,2, Koichi Kakimoto³, Kenji Shiraishi^2,1 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.RIAM, Kyushu Univ.)

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