[10p-W631-1~12] CS.5 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▲ [10p-W631-3] The influence of sputtering condition for ferroelectric HfO₂ directly deposited on Si(100) by RF magnetron sputtering

〇MinGee Kim¹、Masakazu Kataoka¹、Rengie Mark D. Mailig¹、Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

キーワード：HfO2, ferroelectric, RF magnetron sputtering

Nowadays, the ferroelectric HfO₂ is widely investigated because of its Si CMOS compatibility. To reduce the depolarization field, direct deposition of HfO₂ with low-temperature annealing process is necessary. In previous research, the control of gas flow ratio for reactive sputtering realized ferroelectric characteristics of undoped HfO₂ directly deposited on Si(100) substrates.
In this research, we investigated the effect of sputtering condition to improve the electrical characteristics of HfO₂/Si(100) structure.