[10p-W641-1~17] 6.3 Oxide electronics

△ [10p-W641-16] In-situ TEM observation of CBRAM during forming process

〇Satoshi Muto¹, Shinya Sakai¹, Atushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

Keywords:ReRAM, CBRAM, TEM

We performed in-situ TEM observation to investigate a forming process of Cu- WO_X type CBRAM. A forming process without observable filaments was observed by applying multiple positive voltage sweep measurements. During the forming process, a gap between electrodes widened and this phenomena suggested that Cu electrode diffused into WO_X. CBRAM showed that set/reset cycles after the forming. This result suggests that CBRAM may operate without filaments by moderately diffusing Cu into the insulator.