【Highlight】[Young Scientist Presentation Award Speech] Development of Transition-Metal Based Chalcogenide Phase-Change Materials for Non-Volatile Phase-Change Memory Application

Yuta Saito; Shogo Hatayama; Shuang Yi; Satoshi Shindo; Paul Fons; Alexander V. Kolobov; Keisuke Kobayashi; Yuji Sutou

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[10p-W833-1~17] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Sun. Mar 10, 2019 1:15 PM - 5:45 PM W833 (W833)

Hirokazu Masai(AIST), Norimitsu Yoshida(Gifu Univ.), Toshihiro Nakaoka(Sophia Univ.)

3:45 PM - 4:00 PM

[10p-W833-10] 【Highlight】[Young Scientist Presentation Award Speech] Development of Transition-Metal Based Chalcogenide Phase-Change Materials for Non-Volatile Phase-Change Memory Application

〇Yuta Saito¹, Shogo Hatayama², Shuang Yi², Satoshi Shindo², Paul Fons¹, Alexander V. Kolobov¹, Keisuke Kobayashi^3,4,5, Yuji Sutou² (1.AIST NeRI, 2.Tohoku Univ., 3.JAEA, 4.Kochi Tech., 5.Nagoya Univ.)

Keywords:phase-change material, chalcogenides, non-volatile memory

We have developped transition-metal based chalcogenides for next-generation non-volatile memory applications. Transition-metal based chalcogenides have an advantage of higher thermal stability compared to conventional phase change materials. I will give a talk on the history of the material development and propose a new route for material exploration.