Poster presentation

[9p-PB4-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Sat. Mar 9, 2019 4:00 PM - 6:00 PM PB4 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[9p-PB4-1] Irradiation Time dependence of x-ray-induced absorption in fused quartz

〇Akihiro Haruki¹, Tanaka Hiroki¹, Nanbo Kento¹, Kuzuu Nobu¹, Horikoshi Hideharu² (1.Fukui Univ., 2.Tosoh SGM)

4:00 PM - 6:00 PM

[9p-PB4-2] Penetration Depth dependence of x-ray-induced absorption intensity in silica glasses

〇Hiroki Tanaka¹, Akihiro Haruki¹, Kento Nanbo¹, Nobu Kuzuu¹, Hideharu Horikoshi² (1.Univ. of Fukui, 2.Tosoh SGM)

4:00 PM - 6:00 PM

[9p-PB4-3] Origin of the fluctuation of the absorption intensity of fused quartz

〇Kento Nanbo¹, Akihiro Haruki¹, Hiroki Tanaka¹, Nobu Kuzuu¹, Hideharu Horikoshi² (1.Univ. of Fukui, 2.Tosoh SGM)

4:00 PM - 6:00 PM

[9p-PB4-4] Radiophotoluminescence phenomenon in Cu-doped silica glasses prepared from porous silica glass

〇Yuya Takada¹, Ryo Hashikawa¹, Atsushi Kinomura², Takeshi Saito², Takashi Wakasugi¹, Kohei Kadono¹ (1.Kyoto Inst. Tech., 2.KURNS)

4:00 PM - 6:00 PM

[9p-PB4-5] Fabrication of perfectly-surface-crystallized glass-ceramics in BaO-TiO₂-GeO₂ system and its electro-optic effect

〇(B)Haruki Okamoto¹, Tomoki Otsuki¹, Yuta Hayashibara¹, Nobuaki Terakado^1,2, Yoshihiro Takahashi¹, Takumi Fujiwara¹ (1.Tohoku Univ., 2.JST-PRESTO)

4:00 PM - 6:00 PM

[9p-PB4-6] Rapid Nucleation Induced by Medium Range Structure of Fluoroborate Glasses

〇Kenji Shinozaki¹, Yoshiki Ishii², Koji Ohara³ (1.AIST, 2.Osaka Univ., 3.JASRI)

4:00 PM - 6:00 PM

[9p-PB4-7] Phase Stability of Amorphous Oxide Semiconductor In-Si-O Thin Films

〇Tatsuki Hori¹, Ha Hong¹, Toshihide Nabatame², Kazuhito Tsukagoshi², Akihiko Fujiwara¹ (1.Kwansei Gakuin Unive., 2.NIMS)

4:00 PM - 6:00 PM

[9p-PB4-8] Crystallization of nanocrystalline Si thin films by flash lamp annealing

〇Aimi Yago¹, Keisuke Ohdaira¹ (1.JAIST)

4:00 PM - 6:00 PM

[9p-PB4-9] Preparation and evaluation of a-Si:H for near-infrared filter by DC sputterung method

〇Yoshio Kawamata¹, Horoshi Ito¹ (1.National Inst. of tech. Tokyo college)

4:00 PM - 6:00 PM

[9p-PB4-10] Fabrication of Ni - Cr based resistor by printing technology and measurement of characteristics as heater

〇Akinari Matoba¹, Jun Okutani¹, Yoshiteru Douguchi¹, Yoshihiro Ueda¹, Yasuto Yonezawa¹ (1.IRII)

4:00 PM - 6:00 PM

[9p-PB4-11] Nanopore formation by depression of metal nanoparticles into SiO₂ thin films

〇(M1)Yu Tatemizo¹, Muneyuki Naito¹ (1.Konan Univ.)

Oral presentation

[10a-W833-1~9] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Sun. Mar 10, 2019 9:00 AM - 11:30 AM W833 (W833)

Tsuyoshi Honma(Nagaoka Univ. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-W833-1] Correlation between preparation condition and structure of ZnO-P₂O₅ glasses

〇Hirokazu Masai¹, Yohei Onodera², Koji Ohara³, Hironori Ofuchi³, Takahiro Ohkubo⁴ (1.AIST, 2.Kyoto Univ., 3.SPring-8/JASRI, 4.Chiba Univ.)

9:15 AM - 9:30 AM

[10a-W833-2] Photoelastic property in multi-composition phosphate glasses

〇Yuusuke Tomihara¹, Kaoru Kisimoto¹, Hiromichi Takebe¹, Akira Saitoh¹ (1.Ehime Univ.)

9:30 AM - 9:45 AM

[10a-W833-3] Mechanical properties and structure in zinc tin phosphate glasses

〇Akira Saitoh¹, Takaya Okamoto¹, Hiromichi Takebe¹ (1.Ehime Univ.)

9:45 AM - 10:00 AM

[10a-W833-4] Structures and third-order nonlinear optical properties of TeO₂-Ag₂O glasses

〇Tomokatsu Hayakawa¹, Kenta Kato¹, Kosuke Muramatsu¹, Katsuhiro Yamamoto¹, Koichi Hayashi¹, J.-R. Dulcere², Philippe THomas² (1.Nagoya Inst. Tech., 2.Limoges Univ.)

10:00 AM - 10:15 AM

[10a-W833-5] XANES analysis of silver in RPL Glass Detector for Personal Monitoring

〇Hirokazu Masai¹, Hiroki Kawamoto², Masanori Koshimizu² (1.AIST, 2.Tohoku Univ.)

10:30 AM - 10:45 AM

[10a-W833-6] Measurements of exciton binding energy and stimulated emission gain spectra of Mg-doped ZnO micrometer-thick films

〇Shusuke Fujii¹, Yutaka Adachi², Takashi Uchino¹ (1.Kobe Univ., 2.NIMS)

10:45 AM - 11:00 AM

[10a-W833-7] Stimulated emission in Ge-doped silica glass resulting from singlet-to-triplet excitation

Takuya Tsujimura¹, 〇Takashi Uchino¹ (1.Kobe Univ)

11:00 AM - 11:15 AM

[10a-W833-8] Compositional optimization of small photoelastic Bi₂O₃-SiO₂ glasses for an optical fiber

〇Katsuki Hayashi¹, Hiromichi Takebe¹, Akira Saitoh¹ (1.Ehime Univ.)

11:15 AM - 11:30 AM

[10a-W833-9] Creation of amorphous-characteristic point defects in α-quartz by 2.5 MeV electrons and by fast neutrons

Linards Skuja¹, Nadege Ollier², 〇Koichi Kajihara³, Krisjanis Smits¹ (1.Univ. Latvia, 2.Univ. Paris-Saclay, 3.TMU)

Oral presentation

[10p-W833-1~17] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Sun. Mar 10, 2019 1:15 PM - 5:45 PM W833 (W833)

Hirokazu Masai(AIST), Norimitsu Yoshida(Gifu Univ.), Toshihiro Nakaoka(Sophia Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[10p-W833-1] Improvement of analysis method for diffusion of OH groups
through the binding interface of silica glasses

〇Yuya Sugiyama¹, Yusuke Aoki¹, Nobu Kuzuu¹, Hideharu Horikoshi², Naohiro Horii³ (1.Fukui Univ., 2.Tosoh SGM, 3.Fukui Coll.)

1:30 PM - 1:45 PM

[10p-W833-2] Determination of Hydroxyl Diffusion Coefficient by the Fitting of Theoretical Solution to the Experimental Data of OH Distribution near the Binding Interface of Silica Glasses

〇(M1)Yusuke Aoki¹, Yu Arakawa¹, Nobu Kuzuu¹, Hideharu Horikoshi², Yuya Sugiyama¹, Naohiro Horii³ (1.Fukui Univ., 2.Tosoh SGM, 3.Nat'l Inst. Tech. Fukui Coll)

1:45 PM - 2:00 PM

[10p-W833-3] Devitrification of Silica Glass Promoted by Contacting an NaCl Grain I:
Analysis of Devitrification Process of Silica Glass

〇Naohiro Horii¹, Kuzuu Nobu², Hideharu Horikoshi³ (1.NIT Fukui College, 2.Univ. of Fukui, 3.Tosoh SGM)

2:00 PM - 2:15 PM

[10p-W833-4] Devitrification of Silica Glass Promoted by Contacting an NaCl Grain II: A Model to Describe the Devitrification

〇Nobu Kuzuu¹, Naohiro Hrii², Hideharu Horikoshi³ (1.Univ. of Fukui, 2.NIT Fukui College, 3.Tosoh SGM)

2:15 PM - 2:30 PM

[10p-W833-5] Laser-induced crystallization of Na₂Fe_xMn_1-xP₂O₇ glass

〇Tsuyoshi Honma¹, Yu Kumagai¹, Takayuki Komatsu¹ (1.Nagaoka Univ. Tech.)

2:30 PM - 2:45 PM

[10p-W833-6] Intermediate-Range Orders on the Glass Transition and Aging

〇Hiroshi Kobayashi¹, Haruyuki Takahashi² (1.AIST (retired), 2.Ibaraki Uni.)

2:45 PM - 3:00 PM

[10p-W833-7] Effect of textured glass substrates with various surface roughness on the crystallization mechanism of electron-beam-evaporated amorphous Si films induced by FLA

〇Keisuke Kurata¹, Keisuke Ohdaira¹ (1.JAIST)

3:00 PM - 3:15 PM

△ [10p-W833-8] Low-temperature yttrium oxide atomic layer deposition

〇Kentaro Saito¹, Kensaku Kanomata², Masanori Miura², BashirAhmmad Arima¹, Shigeru Kubota¹, Fumihiko Hirose¹ (1.Yamagata Univ., 2.ROEL Yamagata Univ.)

3:15 PM - 3:30 PM

△ [10p-W833-9] Anticorrosion Characteristics of Nb₂O₅ Laminated Coating by Room Temperature Atomic Layer Deposition

〇(DC)Kazuki Yoshida¹, Masanori Miura², Ying Jie¹, Kanomata Kensaku², Fumihiko Hirose¹ (1.Yamagata Univ., 2.ROEL Yamagata Univ.)

3:45 PM - 4:00 PM

[10p-W833-10] 【Highlight】[Young Scientist Presentation Award Speech] Development of Transition-Metal Based Chalcogenide Phase-Change Materials for Non-Volatile Phase-Change Memory Application

〇Yuta Saito¹, Shogo Hatayama², Shuang Yi², Satoshi Shindo², Paul Fons¹, Alexander V. Kolobov¹, Keisuke Kobayashi^3,4,5, Yuji Sutou² (1.AIST NeRI, 2.Tohoku Univ., 3.JAEA, 4.Kochi Tech., 5.Nagoya Univ.)

4:00 PM - 4:15 PM

△ [10p-W833-11] Reversible resistance change to gamma-ray irradiation in a Ge-(Sb)-Te thin film with Ag-Pt electrodes

〇(B)Tatsuya Watanabe¹, Hyoseong Park¹, Isao Yoda², Yoshinori Shohmitsu³, Shigeo Kawasaki³, Toshihiro Nakaoka¹ (1.Sophia Univ., 2.Tokyo Tech, 3.Japan Aerospace Exploration Agency)

4:15 PM - 4:30 PM

[10p-W833-12] Optical absorption spectra of copper sulfide dendrites

〇Tamihiro Gotoh¹, Ryotaro Nishikawa¹ (1.Gunma Univ.)

4:30 PM - 4:45 PM

[10p-W833-13] Photo-induced oxidation of amorphous Ge₄₀S₆₀ films - Observation of the oxide layer by X-ray• neutron reflectometry

〇Yoshifumi Sakaguchi¹, Takayasu Hanashima¹, Hiroyuki Aoki², Al-Amin Ahmed Simon³, Maria Mitkova³ (1.CROSS, 2.JAEA, 3.BSU)

4:45 PM - 5:00 PM

[10p-W833-14] Fabrication of 2-Terminal Memory Test Element with 100 nm Diameter or Smaller

〇Ryo Fukuoka¹, Hiroki Tokuhira¹, Katsuyoshi Komatsu¹, Koji Matsuo¹, Hide Tanaka¹, Gaku Sudo¹, Kazuya Ohuchi¹ (1.Toshiba Memory Corporation)

5:00 PM - 5:15 PM

[10p-W833-15] High Temperature Creep Behavior of Ge₂₈Sb₁₂Se₆₀ glass

〇Naoyuki Kitamura¹ (1.AIST)

5:15 PM - 5:30 PM

▲ [10p-W833-16] Contact resistance change memory with N-doped Cr₂Ge₂Te₆ phase change material

〇YI SHUANG¹, Yuji Sutou¹, Shogo Hatayama¹, Satoshi Shindo¹, Song Yunheub², Daisuke Ando¹, Junichi Koike¹ (1.Tohoku Univ., 2.Hanyang Univ.)

5:30 PM - 5:45 PM

[10p-W833-17] Electric transport mechanism of low-resistance amorphous Cr₂Ge₂Te₆

〇(D)Shogo Hatayama¹, Yuji Sutou¹, Daisuke Ando¹, Junichi Koike¹, Keisuke Kobayashi^2,3 (1.Tohoku Univ., 2.JASRI, 3.Kochi Univ. Technol.)

Sessions

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[9p-PB4-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[10a-W833-1~9] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[10p-W833-1~17] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [10p-W833-8] Low-temperature yttrium oxide atomic layer deposition

△ [10p-W833-9] Anticorrosion Characteristics of Nb2O5 Laminated Coating by Room Temperature Atomic Layer Deposition

△ [10p-W833-11] Reversible resistance change to gamma-ray irradiation in a Ge-(Sb)-Te thin film with Ag-Pt electrodes

▲ [10p-W833-16] Contact resistance change memory with N-doped Cr2Ge2Te6 phase change material

Authentication

△ [10p-W833-9] Anticorrosion Characteristics of Nb₂O₅ Laminated Coating by Room Temperature Atomic Layer Deposition

▲ [10p-W833-16] Contact resistance change memory with N-doped Cr₂Ge₂Te₆ phase change material