The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[10p-W833-1~17] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Sun. Mar 10, 2019 1:15 PM - 5:45 PM W833 (W833)

Hirokazu Masai(AIST), Norimitsu Yoshida(Gifu Univ.), Toshihiro Nakaoka(Sophia Univ.)

4:30 PM - 4:45 PM

[10p-W833-13] Photo-induced oxidation of amorphous Ge40S60 films - Observation of the oxide layer by X-ray• neutron reflectometry

Yoshifumi Sakaguchi1, Takayasu Hanashima1, Hiroyuki Aoki2, Al-Amin Ahmed Simon3, Maria Mitkova3 (1.CROSS, 2.JAEA, 3.BSU)

Keywords:amorphous chalcogenide, Photo-induced oxidation, X-ray and neutron reflectometry

We found a photo-induced structural transition in amorphous Ge44S56 films in air, initiated by photo-induced oxidation. The Raman spectrum changes from that of Ge40S60 glasses to that of Ge33S67 (GeS2) glasses by a laser excitation with the wavelength of 441.6 nm and the power of 80 mW. This change occurs only in air, and oxygen was observed in the laser-illuminated films by SEM EDS. In this study, we try to find a presence of an oxide layer, which is supposed to be produced after the laser-excitation, by X-ray and neutron reflectivity techniques.