[10p-W833-1~17] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[10p-W833-13] Photo-induced oxidation of amorphous Ge₄₀S₆₀ films - Observation of the oxide layer by X-ray• neutron reflectometry

〇Yoshifumi Sakaguchi¹, Takayasu Hanashima¹, Hiroyuki Aoki², Al-Amin Ahmed Simon³, Maria Mitkova³ (1.CROSS, 2.JAEA, 3.BSU)

Keywords:amorphous chalcogenide, Photo-induced oxidation, X-ray and neutron reflectometry

We found a photo-induced structural transition in amorphous Ge₄₄S₅₆ films in air, initiated by photo-induced oxidation. The Raman spectrum changes from that of Ge₄₀S₆₀ glasses to that of Ge₃₃S₆₇ (GeS2) glasses by a laser excitation with the wavelength of 441.6 nm and the power of 80 mW. This change occurs only in air, and oxygen was observed in the laser-illuminated films by SEM EDS. In this study, we try to find a presence of an oxide layer, which is supposed to be produced after the laser-excitation, by X-ray and neutron reflectivity techniques.