The 66th JSAP Spring Meeting, 2019

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16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[10p-W833-1~17] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Sun. Mar 10, 2019 1:15 PM - 5:45 PM W833 (W833)

Hirokazu Masai(AIST), Norimitsu Yoshida(Gifu Univ.), Toshihiro Nakaoka(Sophia Univ.)

5:15 PM - 5:30 PM

▲ [10p-W833-16] Contact resistance change memory with N-doped Cr2Ge2Te6 phase change material

〇YI SHUANG1, Yuji Sutou1, Shogo Hatayama1, Satoshi Shindo1, Song Yunheub2, Daisuke Ando1, Junichi Koike1 (1.Tohoku Univ., 2.Hanyang Univ.)

Keywords:Non-volatile memory, Phase change material