3D Atomic Imaging of Impurities Doped in Semiconductors Using Photoelectron Holography

Kazuo Tsutsui; Tomohiro Matsushita; Kotaro Natori; Tatsuhiro Ogawa; Takayuki Muro; Yshitada Morikawa; Takuya Hoshii; Kuniyuki Kakushima; Hitoshi Wakabayashi; Kouichi Hayashi; Fumihiko Matsui; Toyohiko Kinoshita

Presentation information

Symposium (Oral)

Symposium » Nanoscale 2D/3D analyses for new device and materials development II

[10p-W933-1~9] Nanoscale 2D/3D analyses for new device and materials development II

Sun. Mar 10, 2019 1:30 PM - 5:45 PM W933 (W933)

Yuji Matsumoto(Tohoku Univ.), Takashi Furukawa(Hitachi High-Technologies Corporation)

4:15 PM - 4:45 PM

[10p-W933-7] 3D Atomic Imaging of Impurities Doped in Semiconductors Using Photoelectron Holography

〇Kazuo Tsutsui¹, Tomohiro Matsushita², Kotaro Natori¹, Tatsuhiro Ogawa¹, Takayuki Muro², Yshitada Morikawa³, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kouichi Hayashi⁴, Fumihiko Matsui⁵, Toyohiko Kinoshita² (1.Tokyo Tech, 2.JASRI, 3.Osaka Univ., 4.Nagoya Inst. Tech., 5.Inst. Molecular Science)

Keywords:photoelectron holography, impurity doping, imaging