10:30 AM - 10:45 AM
△ [11a-70A-6] Theoretical investigation on Hall mobility in 4H-SiC MOS inversion layers
Keywords:SiC, MOS, mobility
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)
Tetsuo Hatakeyama(Toyama Pref. Univ.)
10:30 AM - 10:45 AM
Keywords:SiC, MOS, mobility