Poster presentation

[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

Sat. Mar 9, 2019 9:30 AM - 11:30 AM PB3 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[9a-PB3-1] Solution growth of SiC using Cr-Al solvent

〇Kouki Suzuki¹, Toshinori Taishi¹ (1.Shinshu Univ. (Eng.))

9:30 AM - 11:30 AM

[9a-PB3-2] Thick epitaxial growth on 4H-SiC C-face on-axis substrates

〇Keiko Masumoto¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST)

9:30 AM - 11:30 AM

[9a-PB3-3] Measurement of Electrical Properties for The Buffer Layer in 4H-SiC Wafer with 3 Layer Structure Using THz-TDSE

〇Kiichi Sato¹, Takashi Fujii^1,3, Tsutomu Araki¹, Shinichiro Mori¹, Kotaro Ishiji², Toshiyuki Iwamoto³, Ryuichi Sugie⁴ (1.Ritsumeikan Univ., 2.Kyushu Synchrotron Light Research Center, 3.PNP, 4.TRC)

9:30 AM - 11:30 AM

[9a-PB3-4] Behavior of Surface Organic Contaminants on 4H-SiC Substrate

〇Haruto Koriyama¹, Yoshiharu Enta¹ (1.Hirosaki Univ.)

9:30 AM - 11:30 AM

[9a-PB3-5] Structural Identification of the Single-Photon Sources Formed on SiC Surface using Isotope Oxygen

〇Yasuto Hijikata¹, Yu-ichiro Matsushita², Takeshi Ohshima³ (1.Saitama Univ., 2.Tokyo Tech., 3.QST)

9:30 AM - 11:30 AM

[9a-PB3-6] High-precision ion-implantation on 4H-SiC by ion-implantation angle control

〇(B)Tomonori Okada¹, Jun Inoue¹, Fumitaka Nishiyama¹, Hiroshi Sezaki², Shin-Ichiro Kuroki¹ (1.RNBS, 2.Phenitec Semicon)

9:30 AM - 11:30 AM

[9a-PB3-7] SiC Deep Etching by the BOSCH Process for Making 4H-SiC CMOS Logic Circuits

〇(B)Kenshiro Morimoto¹, Kosuke Muraoka¹, Kazutoshi Kojima², Shin-Ichiro Kuroki¹ (1.RNBS, 2.AIST)

9:30 AM - 11:30 AM

[9a-PB3-8] Distinguishing nitrogen-containing sites in SiO₂/SiC by X-ray absorption spectroscopy

〇Noritake Isomura¹, Katsuhiro Kutsuki¹, Keita Kataoka¹, Yukihiko Watanabe¹, Yasuji Kimoto¹ (1.Toyota CRDL)

9:30 AM - 11:30 AM

[9a-PB3-9] NO molecules reaction to 4H-SiC (1-100) /SiO₂ interface calculated by DFTB simulations

〇Miki Ogasawara¹, Takayuki Hirose¹ (1.Fuji Electric)

9:30 AM - 11:30 AM

[9a-PB3-10] The oxidation simulation of 4H-SiC with O₂ molecules on (1-100) face

〇Takayuki Hirose¹, Miki Ogasawara¹ (1.Fuji Electric)

9:30 AM - 11:30 AM

▲ [9a-PB3-11] Influence of biaxial stress on the electron transport properties at SiO2/4H-SiC interfaces

〇(D)WEI FU¹, Akiko Ueda², Hiroshi Yano¹, Shinsuke Harada², Takeaki Sakurai¹ (1.Tsukuba Univ., 2.AIST)

9:30 AM - 11:30 AM

[9a-PB3-12] Effect of Mechanical Uniaxial Stress on Mobility in 4H-SiC(0001) MOSFET

〇Wakana Takeuchi^1,2, Katsuhiro Kutsuki³, Eiji Kagoshima⁴, Toru Onishi⁴, Shinya Iwasaki⁴, Mitsuo Sakashita², Hirokazu Fujiwara⁴, Osamu Nakatsuka² (1.Aichi institute of tech., 2.Nagoya Univ, 3.Toyota Central R&D LABS., INC, 4.TOYOTA MOTOR CORP.)

9:30 AM - 11:30 AM

[9a-PB3-13] Radiation response of 4 H-SiC JFETs in in high dose region

〇Akinori Takeyama¹, Keigo Shimizu², Takahiro Makino¹, Yuichi Yamazaki¹, Takeshi Ohshima¹, Shin-ichiro Kuroki³, Yasunori Tanaka² (1.QST, 2.AIST, 3.RNBS, Hiroshima Univ.)

9:30 AM - 11:30 AM

[9a-PB3-14] Development of high blocking voltage 4H-SiC Schottky-pn diode

〇Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST)

9:30 AM - 11:30 AM

[9a-PB3-15] Power cycling lifetime improvement of SiC-MOSFETs by annealing treatment

〇Tatsuhiro Suzuki¹, Mari Yamashita¹, Nobuo Kojima¹, Satoshi Tanimoto^1,2, Kan Akatsu² (1.PEAL, NISSAN ARC, 2.Shibaura Inst. Tech.)

9:30 AM - 11:30 AM

[9a-PB3-16] High Temperature Switching Test of SiC-MOSFET Half-Bridge Power Modules installed in In-Wheel Motor

〇Satoshi Tanimoto^1,3, Mari Yamashita¹, Nobuo Kojima¹, Tastuhiro Suzuki¹, Sawa Araki¹, Shinji Sato², Kan Akatsu³ (1.PEAL, NISSAN ARC, 2.ADPERC, AIST, 3.Shibaura Inst. Tech.)

9:30 AM - 11:30 AM

[9a-PB3-17] Metallized ceramic substrate/baseplate structure using Cr-Cu/Cu clad material applicable to power module

〇Nobuo Kojima¹, Mari Yamashita¹, Tatsuhiro Suzuki¹, Sawa Araki¹, Satoshi Tanimoto^1,2, Kan Akatsu² (1.NISSAN ARC, 2.Shibaura Inst. Tech.)

9:30 AM - 11:30 AM

[9a-PB3-18] Vibration Endurance Test of SiC Half-Bridge Power Modules built in In-Wheel Motor

〇Mari Yamshita¹, Nobuo Kojima¹, Tatsuhiro Suzuki¹, Sawa Araki¹, Satoshi Tanimoto¹, Kan Akatsu² (1.NISSAN ARC, Ltd, 2.Shubaura Inst Tech)

Oral presentation

[10a-70A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 10, 2019 9:00 AM - 12:00 PM 70A (70th Anniversary Auditorium)

Koji Kita(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-70A-1] One dimensional periodic structure of vicinal SiC surface

〇Ryota Koda¹, Kohei Fukuma¹, Anton Visikovskiy¹, Satoru Tanaka¹ (1.Kyushu University)

9:15 AM - 9:30 AM

[10a-70A-2] Magic-angles of nanofacets on vicinal SiC(0001) surfaces

〇Kaede Hirayama¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Satoru Tanaka¹ (1.Kyushu Univ.)

9:30 AM - 9:45 AM

[10a-70A-3] Epitaxially grown aluminum oxide monolayer on 4H-SiC(0001) surfaces

〇Shotaro Oie¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Tetsuro Shirasawa², Takushi Imori³, Fumio Komori³, Satoru Tanaka¹ (1.Kyushu Univ., 2.AIST, 3.Univ. of Tokyo)

9:45 AM - 10:00 AM

[10a-70A-4] Evaluation of the surface potential of oxidized silicon carbide by a Laser Terahertz Emission Microscope

〇Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama², Masayoshi Tonouchi², Takuji Hosoi³, Takayoshi Shimura³, Heiji Watanabe³ (1.SCREEN, 2.ILE, Osaka Univ., 3.Graduate School of Eng., Osaka Univ.)

10:00 AM - 10:15 AM

[10a-70A-5] Structure of nitrogen-incorporated defects in oxidation films of SiC and their electronic states

〇Yuichiro Matsushita¹, Takuma Kobayashi¹ (1.Tokyo Institute of Technology)

10:30 AM - 10:45 AM

[10a-70A-6] Thermal oxidation of 4H-SiC under CO₂ ambient

〇Takuji Hosoi¹, Momoe Ohsako¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

[10a-70A-7] Improved characteristics of 4H-SiC(0001) MOS devices by CO₂ annealing

〇Takuji Hosoi¹, Momoe Ohsako¹, Takasyoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:00 AM - 11:15 AM

[10a-70A-8] Effect of Deep Level Donor in Channel Region on SiC MOSFETs

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Koji Kita², Naruhisa Miura¹ (1.Mitsubishi Electric Corp., 2.Univ. of Tokyo)

11:15 AM - 11:30 AM

[10a-70A-9] Reliability enhancement effects of SiC-MOSFETs under gate-switching operation

Rei Fukunaga¹, Kenzo Saito¹, Koji Shinmachi¹, Yuki Inoue¹, Naoki Oogushi¹, 〇Eiichi Murakami¹ (1.Kyushu Sangyo Univ.)

11:30 AM - 11:45 AM

[10a-70A-10] Temperature dependent (-60-200 ℃) drain current model of SiC-MOSFETs

Mitsuaki Suzuki¹, Yohei Takahashi¹, 〇Eiichi Murakami¹ (1.Kyushu Sangyo Univ.)

11:45 AM - 12:00 PM

[10a-70A-11] 1.7 kV 100 A 4H-SiC V-groove Trench MOSFETs

〇Ryunosuke Nakamura¹, Tatsushi Kaneda¹, Kosuke Uchida¹, Toru Hiyoshi¹, Mitsuhiko Sakai¹, Hirotaka Oomori¹, Takashi Tsuno¹ (1.Sumitomo Electric)

Oral presentation

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)

Tetsuo Hatakeyama(Toyama Pref. Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [11a-70A-1] Forward Thermionic Field Emission Transport and Characterization of Barrier Height in Heavily-Doped 4H-SiC Schottky Barrier Diodes

〇Masahiro Hara¹, Satoshi Asada², Takuya Maeda², Tsunenobu Kimoto² (1.Faculty of Eng., Kyoto Univ., 2.Kyoto Univ.)

9:15 AM - 9:30 AM

△ [11a-70A-2] Carbon-Related Defects in SiC/SiO₂ Systems Revealed by First-Principles Calculations

〇(P)Takuma Kobayashi¹, Yu-ichiro Matsushita¹ (1.Tokyo Tech)

9:30 AM - 9:45 AM

[11a-70A-3] Microscopic Mechanism of Reduction in Carbon-Related Defects at a SiC/SiO₂ Interface Due to Phosphorus Treatment

〇(P)Takuma Kobayashi^1,2, Yu-ichiro Matsushita¹, Takafumi Okuda², Tsunenobu Kimoto², Atsushi Oshiyama³ (1.Tokyo Tech, 2.Kyoto Univ., 3.Nagoya Univ.)

9:45 AM - 10:00 AM

▼ [11a-70A-4] Similarity and Difference of the Impact of Ion Implantation and Thermal Oxidation on the Lattice Structure of 4H-SiC Surfaces

〇Adhi Dwi Hatmanto¹, Koji Kita¹ (1.The Univ. of Tokyo)

10:00 AM - 10:15 AM

△ [11a-70A-5] Study on Leakage Current Conduction Mechanism at high temperature in Al₂O₃/SiO₂/n-type 4H-SiC MOS Capacitors

〇Atsushi Tamura¹, Masahiro Masunaga², Shintaroh Sato², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Hitachi, Ltd. R&D Group)

10:30 AM - 10:45 AM

△ [11a-70A-6] Theoretical investigation on Hall mobility in 4H-SiC MOS inversion layers

〇Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

△ [11a-70A-7] Dependence of interface-state-density distribution on doping concentration of p-body
in SiC MOSFETs

〇Koji Ito¹, Takuma Kobayashi¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

11:00 AM - 11:15 AM

▼ [11a-70A-8] An anomalous negative shift of flat-band voltage of NO annealed SiO₂/4H-SiC MOS capacitors

〇(D)Taehyeon Kil¹, Atsushi Tamura¹, Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo)

11:15 AM - 11:30 AM

[11a-70A-9] Effects of H₂O Annealing after SiO₂/4H-SiC Interface Nitridation on MOSFET Characteristics

〇(M2)Mizuki Nishida¹, Koji Kita¹ (1.The Univ. of Tokyo)

11:30 AM - 11:45 AM

△ [11a-70A-10] Improvement of 4H-SiC p-channel MOSFET Interface Characteristics by Combination of Low Temperature H₂O-POA and H₂-POA

〇Jun Koyanagi¹, Koji Kita¹ (1.The Univ. of Tokyo)

Oral presentation

[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 11, 2019 1:00 PM - 5:30 PM 70A (70th Anniversary Auditorium)

Koichi Murata(CRIEPI), Tomoaki Furusho(Mitsubishi Electric)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[11p-70A-1] Development of solution growth technique for p-type 4H-SiC crystals with Si-Al solvents

〇Takeshi Mitani¹, Naoyoshi Komatsu¹, Yuichiro Hayashi¹, Tomohisa Kato¹, Hajime Okumura¹ (1.AIST)

1:15 PM - 1:30 PM

[11p-70A-2] Compatibility of dislocation conversion and inclusion suppression in 3 inch SiC solution growth on 4° off substrate

〇Takama Unno¹, Can Zhu¹, Shunta Harada¹, Haruhiko Koizumi¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

1:30 PM - 1:45 PM

△ [11p-70A-3] Solution growth of ultra-high quality 4H-SiC using solvent inclusion free seed crystal

〇Kotaro Kawaguchi¹, Kazuaki Seki², Kazuhiko Kusunoki^1,2 (1.Tohoku Univ., 2.NSSMC)

1:45 PM - 2:00 PM

[11p-70A-4] Optimization of growth condition of SiC solution growth by the predication model constructed by machine learning for larger diameter

〇Toru Ujihara^1,2,4, Yosuke Tsunooka^2,3, Tomoki Endo², Can Zhu¹, Kentaro Kutsukake⁴, Taka Narumi⁵, Takeshi Mitani³, Tomohisa Kato³, Miho Tagawa^1,2, Shunta Harada^1,2 (1.IMaSS Nagoya Univ., 2.Nagoya Univ., 3.AIST, 4.RIKEN, 5.VBL Nagoya Univ.)

2:00 PM - 2:15 PM

△ [11p-70A-5] High-speed prediction of crystallization conditions of SiC PVT method using machine learning

〇(M1)Yiqun Jiang^1,2, Yosuke Tsunooka^1,2,3, Goki Hatasa^1,2, Taka Narumi⁴, Kentaro Kutsukake⁵, Shunta Harada^1,2, Miho Tagawa^1,2, Toru Ujihara^1,2,3,4 (1.Grad. School of Eng. Nagoya Univ., 2.IMASS Nagoya Univ., 3.GaN-OIL AIST, 4.VBL Nagoya Univ., 5.RIKEN AIP)

2:15 PM - 2:30 PM

[11p-70A-6] Development of Φ6inch 4H-SiC Crystals in High-temperature Gas Source Method

〇Takahiro Kanda¹, Takeshi Okamoto¹, Yuichiro Tokuda¹, Gen Suzuki¹, Nobuyuki Ooya¹, Emi Makino¹, Hideyuki Uehigashi¹, Norihiro Hoshino², Isaho Kamata², Hidekazu Tsuchida² (1.DENSO CORPORATION, 2.CRIEPI)

2:30 PM - 2:45 PM

[11p-70A-7] Variation of dislocation densities in thickness profile of 4H-SiC bulk crystal grown by gas source method

〇Norihiro Hoshino¹, Isaho Kamata¹, Yuichiro Tokuda³, Takahiro Kanda³, Naohiro Sugiyama^2,3, Hidekazu Tsuchida¹ (1.CRIEPI, 2.AIST, 3.DENSO CORPORATION)

2:45 PM - 3:00 PM

[11p-70A-8] Growth-rate enhancement for 4H-SiC CVD trench filling

〇Shiyang Ji¹, Ryoji Kosugi¹, Kazutoshi Kojima¹, Kohei Adachi¹, Yasuyuki Kawada¹, Kazuhiro Mochizuki¹, Yoshiyuki Yonezawa¹, Sadafumi Yoshida¹, Hajime Okumura¹ (1.AIST)

3:15 PM - 3:30 PM

[11p-70A-9] Lifetime mapping around surface roughness on a 4H-SiC wafer

〇Keisuke Nagaya¹, Takashi Hirayama¹, Masashi Kato¹ (1.Nagoya Inst. Tech.)

3:30 PM - 3:45 PM

[11p-70A-10] Observation of a short lifetime layer by buried N/V co-doping in 4H-SiC

〇Keisuke Nagaya¹, Takashi Hirayama¹, Takeshi Tawara^2,3, Koichi Murata⁴, Hidekazu Tsuchida⁴, Masashi Kato¹ (1.Nagoya Inst. Tech., 2.AIST., 3.Fuji Electric Co., Ltd., 4.CRIEPI.)

3:45 PM - 4:00 PM

[11p-70A-11] PL analysis of individual partial dislocations in 4H-SiC epilayers

〇Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Mitsuhiro Kushibe¹ (1.Toshiba Corp.)

4:00 PM - 4:15 PM

[11p-70A-12] Relationship between basal-plane dislocation depth and stacking fault expansion current density in forward-current degradation of 4H-SiC PiN diode

〇SHOHEI HAYASHI^1,2, Tamotsu Yamashita^1,3, Junji Senzaki¹, Koji Nakayama¹, Mayumi Morizuka¹, Yoshiyuki Yonezawa¹, Tomohisa Kato¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST, 2.Toray Research Center, 3.Showa Denko)

4:15 PM - 4:30 PM

[11p-70A-13] Structural analysis of expanded stacking fault induced by bipolar current in epitaxial growth layer on highly nitrogen-doped 4H-SiC substrate

〇Hideaki Teranishi¹, Akira Saito¹, Shingo Hayashi¹, Masaki Miyazato¹, Masaaki Miyajima¹ (1.Fuji Electric)

4:30 PM - 4:45 PM

[11p-70A-14] Effects of Ion Beam Conditions on Nitrogen-Vacancy Center Formation in 4H-SiC

〇(B)Takuma Narahara^1,2, Shinichiro Sato², Yasuto Hijikata¹, Takeshi Oshima² (1.Saitama Univ., 2.QST)

4:45 PM - 5:00 PM

[11p-70A-15] Influence of gamma ray irradiation on creation and luminescence properties of
SiC surface color center

〇Yuichi Yamazaki¹, Hiroki Tsunemi^1,2, Shin-ichiro Sato¹, Yasuto Hijikata², Takeshi Ohshima¹ (1.QST, 2.Saitama Univ.)

5:00 PM - 5:15 PM

[11p-70A-16] Gate-bias control of single photon sources in channel region of 4H-SiC MOSFET (II)

〇(D)Yuta Abe^1,2, Takahide Umeda¹, Mitsuo Okamoto³, Shinsuke Harada³, Shin-ichiro Sato², Yuichi Yamazaki², Takeshi Ohshima² (1.Univ. of Tsukuba, 2.QST, 3.AIST)

5:15 PM - 5:30 PM

[11p-70A-17] Defect formation at metal/(SiC, GaN) interfaces in electric field; First-principles study

〇(M2)Riki Nagasawa¹, Takashi Nakayama¹ (1.Chiba Univ.)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

▲ [9a-PB3-11] Influence of biaxial stress on the electron transport properties at SiO2/4H-SiC interfaces

[10a-70A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

△ [11a-70A-1] Forward Thermionic Field Emission Transport and Characterization of Barrier Height in Heavily-Doped 4H-SiC Schottky Barrier Diodes

△ [11a-70A-2] Carbon-Related Defects in SiC/SiO2 Systems Revealed by First-Principles Calculations

▼ [11a-70A-4] Similarity and Difference of the Impact of Ion Implantation and Thermal Oxidation on the Lattice Structure of 4H-SiC Surfaces

△ [11a-70A-5] Study on Leakage Current Conduction Mechanism at high temperature in Al2O3/SiO2/n-type 4H-SiC MOS Capacitors

△ [11a-70A-6] Theoretical investigation on Hall mobility in 4H-SiC MOS inversion layers

△ [11a-70A-7] Dependence of interface-state-density distribution on doping concentration of p-bodyin SiC MOSFETs

▼ [11a-70A-8] An anomalous negative shift of flat-band voltage of NO annealed SiO2/4H-SiC MOS capacitors

△ [11a-70A-10] Improvement of 4H-SiC p-channel MOSFET Interface Characteristics by Combination of Low Temperature H2O-POA and H2-POA

[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

△ [11p-70A-3] Solution growth of ultra-high quality 4H-SiC using solvent inclusion free seed crystal

△ [11p-70A-5] High-speed prediction of crystallization conditions of SiC PVT method using machine learning

Authentication

△ [11a-70A-2] Carbon-Related Defects in SiC/SiO₂ Systems Revealed by First-Principles Calculations

△ [11a-70A-5] Study on Leakage Current Conduction Mechanism at high temperature in Al₂O₃/SiO₂/n-type 4H-SiC MOS Capacitors

△ [11a-70A-7] Dependence of interface-state-density distribution on doping concentration of p-body
in SiC MOSFETs

▼ [11a-70A-8] An anomalous negative shift of flat-band voltage of NO annealed SiO₂/4H-SiC MOS capacitors

△ [11a-70A-10] Improvement of 4H-SiC p-channel MOSFET Interface Characteristics by Combination of Low Temperature H₂O-POA and H₂-POA