[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-2] Compatibility of dislocation conversion and inclusion suppression in 3 inch SiC solution growth on 4° off substrate

〇Takama Unno¹, Can Zhu¹, Shunta Harada¹, Haruhiko Koizumi¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

Keywords:SiC, solution growth

Solution method is expected as a method for growing high quality 4H-SiC crystals. So far, we have achieved ultra-high-quality crystal by using two-step growth which using Si–5at%Ti solvent for converting threading dislocation in the first-step and then using Si-Cr solvent for thickening in the second-step. In this study, we investigated the solvent composition in order to apply this to crystal of 3 inch 4 deg off, and achieved achievement of both threading dislocation conversion and suppression of inclusion in the first-step crystal growth.