[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

△ [11p-70A-3] Solution growth of ultra-high quality 4H-SiC using solvent inclusion free seed crystal

〇Kotaro Kawaguchi¹, Kazuaki Seki², Kazuhiko Kusunoki^1,2 (1.Tohoku Univ., 2.NSSMC)

Keywords:solution growth, 4H-SiC

In this study, we tried crystal growth on seed crystal (1-100) surface made from solution growth crystals not including basal plane dislocation. From the Raman spectroscopy, the polytype of the grown crystal was 4H-SiC. As a result of carrying out molten KOH etching on the cross section ((0001) surface) of the grown crystal for evaluation of dislocation, many etch pits indicating threading dislocations were found in the seed crystal, but they were not in the grown crystal. Laboratory reflection X-ray topography observation was performed. Basal plane dislocation and stacking fault were not found in the grown crystal in the observation visual field.