[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-4] Optimization of growth condition of SiC solution growth by the predication model constructed by machine learning for larger diameter

〇Toru Ujihara^1,2,4, Yosuke Tsunooka^2,3, Tomoki Endo², Can Zhu¹, Kentaro Kutsukake⁴, Taka Narumi⁵, Takeshi Mitani³, Tomohisa Kato³, Miho Tagawa^1,2, Shunta Harada^1,2 (1.IMaSS Nagoya Univ., 2.Nagoya Univ., 3.AIST, 4.RIKEN, 5.VBL Nagoya Univ.)

Keywords:crystal growth, machine learning, optimization

We successfully made the high-speed prediction model for temperature-, concentration- and flow velocity-distributions in SiC solution gowth by the combination of machine learning and CFD simulation. In this study, we tried to optimize the growth conditions for 85mm crystal using the prediction model.