The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)

Tetsuo Hatakeyama(Toyama Pref. Univ.)

11:15 AM - 11:30 AM

[11a-70A-9] Effects of H2O Annealing after SiO2/4H-SiC Interface Nitridation on MOSFET Characteristics

〇(M2)Mizuki Nishida1, Koji Kita1 (1.The Univ. of Tokyo)

Keywords:SiC, Interface, Anneal