Mizuki Nishida

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

11:15 AM - 11:30 AM

[11a-70A-9] Effects of H₂O Annealing after SiO₂/4H-SiC Interface Nitridation on MOSFET Characteristics

〇(M2)Mizuki Nishida¹, Koji Kita¹ (1.The Univ. of Tokyo)