Atsushi Tamura

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

10:00 AM - 10:15 AM

△ [11a-70A-5] Study on Leakage Current Conduction Mechanism at high temperature in Al₂O₃/SiO₂/n-type 4H-SiC MOS Capacitors

〇Atsushi Tamura¹, Masahiro Masunaga², Shintaroh Sato², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Hitachi, Ltd. R&D Group)