[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

△ [11a-70A-5] Study on Leakage Current Conduction Mechanism at high temperature in Al₂O₃/SiO₂/n-type 4H-SiC MOS Capacitors

〇Atsushi Tamura¹, Masahiro Masunaga², Shintaroh Sato², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Hitachi, Ltd. R&D Group)

Keywords:leakage current, MOS capacitors, Al2O3/SiO2

In order to inspect the effect of high-permitivity insulating film of CMOS at high temperature, the leakage current conduction mechanism of Al₂O₃/SiO₂/n-type 4H-SiC MOS capacitors at high temperature was investigated.As a result, the suppression effct of Al₂O₃ was observed at room temperature, on the other hand, the current density which was considerd to originate from Al₂O₃ became apparent at high temperature.