Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [11a-70A-1] Forward Thermionic Field Emission Transport and Characterization of Barrier Height in Heavily-Doped 4H-SiC Schottky Barrier Diodes

〇Masahiro Hara¹, Satoshi Asada², Takuya Maeda², Tsunenobu Kimoto² (1.Faculty of Eng., Kyoto Univ., 2.Kyoto Univ.)

9:15 AM - 9:30 AM

△ [11a-70A-2] Carbon-Related Defects in SiC/SiO₂ Systems Revealed by First-Principles Calculations

〇(P)Takuma Kobayashi¹, Yu-ichiro Matsushita¹ (1.Tokyo Tech)

9:30 AM - 9:45 AM

[11a-70A-3] Microscopic Mechanism of Reduction in Carbon-Related Defects at a SiC/SiO₂ Interface Due to Phosphorus Treatment

〇(P)Takuma Kobayashi^1,2, Yu-ichiro Matsushita¹, Takafumi Okuda², Tsunenobu Kimoto², Atsushi Oshiyama³ (1.Tokyo Tech, 2.Kyoto Univ., 3.Nagoya Univ.)

9:45 AM - 10:00 AM

▼ [11a-70A-4] Similarity and Difference of the Impact of Ion Implantation and Thermal Oxidation on the Lattice Structure of 4H-SiC Surfaces

〇Adhi Dwi Hatmanto¹, Koji Kita¹ (1.The Univ. of Tokyo)

10:00 AM - 10:15 AM

△ [11a-70A-5] Study on Leakage Current Conduction Mechanism at high temperature in Al₂O₃/SiO₂/n-type 4H-SiC MOS Capacitors

〇Atsushi Tamura¹, Masahiro Masunaga², Shintaroh Sato², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Hitachi, Ltd. R&D Group)

10:30 AM - 10:45 AM

△ [11a-70A-6] Theoretical investigation on Hall mobility in 4H-SiC MOS inversion layers

〇Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

△ [11a-70A-7] Dependence of interface-state-density distribution on doping concentration of p-body
in SiC MOSFETs

〇Koji Ito¹, Takuma Kobayashi¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

11:00 AM - 11:15 AM

▼ [11a-70A-8] An anomalous negative shift of flat-band voltage of NO annealed SiO₂/4H-SiC MOS capacitors

〇(D)Taehyeon Kil¹, Atsushi Tamura¹, Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo)

11:15 AM - 11:30 AM

[11a-70A-9] Effects of H₂O Annealing after SiO₂/4H-SiC Interface Nitridation on MOSFET Characteristics

〇(M2)Mizuki Nishida¹, Koji Kita¹ (1.The Univ. of Tokyo)

11:30 AM - 11:45 AM

△ [11a-70A-10] Improvement of 4H-SiC p-channel MOSFET Interface Characteristics by Combination of Low Temperature H₂O-POA and H₂-POA

〇Jun Koyanagi¹, Koji Kita¹ (1.The Univ. of Tokyo)

Session information

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

△ [11a-70A-1] Forward Thermionic Field Emission Transport and Characterization of Barrier Height in Heavily-Doped 4H-SiC Schottky Barrier Diodes

△ [11a-70A-2] Carbon-Related Defects in SiC/SiO₂ Systems Revealed by First-Principles Calculations

[11a-70A-3] Microscopic Mechanism of Reduction in Carbon-Related Defects at a SiC/SiO₂ Interface Due to Phosphorus Treatment

▼ [11a-70A-4] Similarity and Difference of the Impact of Ion Implantation and Thermal Oxidation on the Lattice Structure of 4H-SiC Surfaces

△ [11a-70A-5] Study on Leakage Current Conduction Mechanism at high temperature in Al₂O₃/SiO₂/n-type 4H-SiC MOS Capacitors

△ [11a-70A-6] Theoretical investigation on Hall mobility in 4H-SiC MOS inversion layers

△ [11a-70A-7] Dependence of interface-state-density distribution on doping concentration of p-body
in SiC MOSFETs

▼ [11a-70A-8] An anomalous negative shift of flat-band voltage of NO annealed SiO₂/4H-SiC MOS capacitors

[11a-70A-9] Effects of H₂O Annealing after SiO₂/4H-SiC Interface Nitridation on MOSFET Characteristics

△ [11a-70A-10] Improvement of 4H-SiC p-channel MOSFET Interface Characteristics by Combination of Low Temperature H₂O-POA and H₂-POA

Authentication

Session information

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

△ [11a-70A-1] Forward Thermionic Field Emission Transport and Characterization of Barrier Height in Heavily-Doped 4H-SiC Schottky Barrier Diodes

△ [11a-70A-2] Carbon-Related Defects in SiC/SiO2 Systems Revealed by First-Principles Calculations

[11a-70A-3] Microscopic Mechanism of Reduction in Carbon-Related Defects at a SiC/SiO2 Interface Due to Phosphorus Treatment

▼ [11a-70A-4] Similarity and Difference of the Impact of Ion Implantation and Thermal Oxidation on the Lattice Structure of 4H-SiC Surfaces

△ [11a-70A-5] Study on Leakage Current Conduction Mechanism at high temperature in Al2O3/SiO2/n-type 4H-SiC MOS Capacitors

△ [11a-70A-6] Theoretical investigation on Hall mobility in 4H-SiC MOS inversion layers

△ [11a-70A-7] Dependence of interface-state-density distribution on doping concentration of p-bodyin SiC MOSFETs

▼ [11a-70A-8] An anomalous negative shift of flat-band voltage of NO annealed SiO2/4H-SiC MOS capacitors

[11a-70A-9] Effects of H2O Annealing after SiO2/4H-SiC Interface Nitridation on MOSFET Characteristics

△ [11a-70A-10] Improvement of 4H-SiC p-channel MOSFET Interface Characteristics by Combination of Low Temperature H2O-POA and H2-POA

Authentication

△ [11a-70A-2] Carbon-Related Defects in SiC/SiO₂ Systems Revealed by First-Principles Calculations

[11a-70A-3] Microscopic Mechanism of Reduction in Carbon-Related Defects at a SiC/SiO₂ Interface Due to Phosphorus Treatment

△ [11a-70A-5] Study on Leakage Current Conduction Mechanism at high temperature in Al₂O₃/SiO₂/n-type 4H-SiC MOS Capacitors

△ [11a-70A-7] Dependence of interface-state-density distribution on doping concentration of p-body
in SiC MOSFETs

▼ [11a-70A-8] An anomalous negative shift of flat-band voltage of NO annealed SiO₂/4H-SiC MOS capacitors

[11a-70A-9] Effects of H₂O Annealing after SiO₂/4H-SiC Interface Nitridation on MOSFET Characteristics

△ [11a-70A-10] Improvement of 4H-SiC p-channel MOSFET Interface Characteristics by Combination of Low Temperature H₂O-POA and H₂-POA