The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 11, 2019 1:00 PM - 5:30 PM 70A (70th Anniversary Auditorium)

Koichi Murata(CRIEPI), Tomoaki Furusho(Mitsubishi Electric)

5:15 PM - 5:30 PM

[11p-70A-17] Defect formation at metal/(SiC, GaN) interfaces in electric field; First-principles study

〇(M2)Riki Nagasawa1, Takashi Nakayama1 (1.Chiba Univ.)

Keywords:interface, defect