Norihiro Hoshino

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:00 PM - 5:30 PM 70A (70th Anniversary Auditorium)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

2:30 PM - 2:45 PM

[11p-70A-7] Variation of dislocation densities in thickness profile of 4H-SiC bulk crystal grown by gas source method

〇Norihiro Hoshino¹, Isaho Kamata¹, Yuichiro Tokuda³, Takahiro Kanda³, Naohiro Sugiyama^2,3, Hidekazu Tsuchida¹ (1.CRIEPI, 2.AIST, 3.DENSO CORPORATION)

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