[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[9a-PB3-5] Structural Identification of the Single-Photon Sources Formed on SiC Surface using Isotope Oxygen

〇Yasuto Hijikata¹, Yu-ichiro Matsushita², Takeshi Ohshima³ (1.Saitama Univ., 2.Tokyo Tech., 3.QST)

Keywords:SiC, single-photon source, oxidation

In this study, we fabricated three types of samples: Ar-, ¹⁶O₂- and ¹⁸O₂-annealed. By comparing the radiation properties of these samples, we attempted to determine whether the generation of the single-photon sources (SPS) formed on SiC surface requires oxidation and the single defects attributed to the surface-formed SPS contain oxygen.