[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[9a-PB3-6] High-precision ion-implantation on 4H-SiC by ion-implantation angle control

〇(B)Tomonori Okada¹, Jun Inoue¹, Fumitaka Nishiyama¹, Hiroshi Sezaki², Shin-Ichiro Kuroki¹ (1.RNBS, 2.Phenitec Semicon)

Keywords:Silicon Carbide, Ion Implantation

We attempted to improve the doping profile of ion implantation into the 4H - SiC substrate by controlling the ion implantation angle.