[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[9a-PB3-7] SiC Deep Etching by the BOSCH Process for Making 4H-SiC CMOS Logic Circuits

〇(B)Kenshiro Morimoto¹, Kosuke Muraoka¹, Kazutoshi Kojima², Shin-Ichiro Kuroki¹ (1.RNBS, 2.AIST)

Keywords:semiconductor, etching, trench

A Well structure on 4H-SiC is required to fabricate CMOS logic circuits. A deep trench was performed by using BOSCH process and a negative photoresist mask. We achieved steep angle of about 85 degree.