[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[9a-PB3-3] Measurement of Electrical Properties for The Buffer Layer in 4H-SiC Wafer with 3 Layer Structure Using THz-TDSE

〇Kiichi Sato¹, Takashi Fujii^1,3, Tsutomu Araki¹, Shinichiro Mori¹, Kotaro Ishiji², Toshiyuki Iwamoto³, Ryuichi Sugie⁴ (1.Ritsumeikan Univ., 2.Kyushu Synchrotron Light Research Center, 3.PNP, 4.TRC)

Keywords:Silicon Carbide, THz-TDSE, Ion implantation

We are planning low concentration ion implantation doping to 4H-SiC wafer with 3 layers structure and the measurement of the electrical properties of ion implanted layer using THz-TDSE. This report, we considered whether it is possible to measure the electrical properties of 4H-SiC sample before ion implantation. Especially, we focused on the measurement of the electrical properties for the buffer layer. The result of analysis, the electrical properties of epitaxial and buffer layers were the reasonable values. We consider that THz-TDSE is possible to analyze the electrical properties of epitaxial and buffer layers simultaneously from this result.