[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-8] Growth-rate enhancement for 4H-SiC CVD trench filling

〇Shiyang Ji¹, Ryoji Kosugi¹, Kazutoshi Kojima¹, Kohei Adachi¹, Yasuyuki Kawada¹, Kazuhiro Mochizuki¹, Yoshiyuki Yonezawa¹, Sadafumi Yoshida¹, Hajime Okumura¹ (1.AIST)

Keywords:trench filling, CVD, super-junction

4H-SiCトレンチのCVD埋め戻し成長における成長条件の検討と成長速度の高速化