[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-7] Variation of dislocation densities in thickness profile of 4H-SiC bulk crystal grown by gas source method

〇Norihiro Hoshino¹, Isaho Kamata¹, Yuichiro Tokuda³, Takahiro Kanda³, Naohiro Sugiyama^2,3, Hidekazu Tsuchida¹ (1.CRIEPI, 2.AIST, 3.DENSO CORPORATION)

Keywords:Silicon carbide, Bulk crystal growth, Dislocation

The variation of dislocation densities in thickness profile of an n-type 4H-SiC bulk crystal obtained with a growth rate of ~3 mm/h by gas source method (called as HTCVD) was evaluated by alternately repeating the surface polishing and the evaluation of dislocation densities. The significant reduction in dislocation density (threading screw dislocation: 1/2, threading edge dislocation: 1/10, basal plane dislocation: 1/20) was confirmed as compared with the seed crystal. Consequently, we confirmed a high-quality crystal growth indicating the reduction of dislocation densities, even at a high growth rate of ~3 mm/h.