Hideaki Teranishi

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:00 PM - 5:30 PM 70A (70th Anniversary Auditorium)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

4:15 PM - 4:30 PM

[11p-70A-13] Structural analysis of expanded stacking fault induced by bipolar current in epitaxial growth layer on highly nitrogen-doped 4H-SiC substrate

〇Hideaki Teranishi¹, Akira Saito¹, Shingo Hayashi¹, Masaki Miyazato¹, Masaaki Miyajima¹ (1.Fuji Electric)