[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-13] Structural analysis of expanded stacking fault induced by bipolar current in epitaxial growth layer on highly nitrogen-doped 4H-SiC substrate

〇Hideaki Teranishi¹, Akira Saito¹, Shingo Hayashi¹, Masaki Miyazato¹, Masaaki Miyajima¹ (1.Fuji Electric)

Keywords:SiC, stacking fault, STEM

A pn diode structure was formed after epitaxial growth on a highly nitrogen doped 4H - SiC substrate. The metal electrode was removed after applying bipolar current. After that, expansion of the strip-like stacking fault was detected by PL measurement. The atomic arrangement of the strip-like stacking fault was examined by HAADF-STEM image using spherical aberration correction STEM, and the type of stacking fault was specified. As a result, the type of stacking fault was found to be DSF (double shockley type stacking fault) denoted by (6, 2) * in Zhdanov notation.