[10a-70A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[10a-70A-9] Reliability enhancement effects of SiC-MOSFETs under gate-switching operation

Rei Fukunaga¹, Kenzo Saito¹, Koji Shinmachi¹, Yuki Inoue¹, Naoki Oogushi¹, 〇Eiichi Murakami¹ (1.Kyushu Sangyo Univ.)

Keywords:SiC-MOSFET

AC-PBTI measurements of commercially-available SiC-MOSFETs are performed under 100 kHz gate-switching operation. The suppression of the threshold voltage shift is not enough for Vgs(OFF)=0 V, but very clear for Vgs(OFF)=-5 V for the duty-cycle (d) less than 0.8. In addition, 1 kHz AC-TDDB measurements are tried and a lifetime enhancement effect (5 times longer physical time) is found for the first time at Vgs(OFF)=-5 V, d=0.5.