Temperature dependent (-60-200 ℃) drain current model of SiC-MOSFETs

Mitsuaki Suzuki; Yohei Takahashi; Eiichi Murakami

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[10a-70A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 10, 2019 9:00 AM - 12:00 PM 70A (70th Anniversary Auditorium)

Koji Kita(Univ. of Tokyo)

11:30 AM - 11:45 AM

[10a-70A-10] Temperature dependent (-60-200 ℃) drain current model of SiC-MOSFETs

Mitsuaki Suzuki¹, Yohei Takahashi¹, 〇Eiichi Murakami¹ (1.Kyushu Sangyo Univ.)

Keywords:SiC-MOSFET

A temperature dependent (-60-200℃) drain current model for a commercially-available SiC-MOSFET is developed. I_ds-V_gs characteristic is modeled by including interface-states effects on Coulomb mobility and threshold voltage shift. I_ds-V_ds characteristic is modeled also by including bulk charge effect, channel length modulation, and V_ds dependence of the drain resistance.