Keisuke Nagaya

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:00 PM - 5:30 PM 70A (70th Anniversary Auditorium)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

3:15 PM - 3:30 PM

[11p-70A-9] Lifetime mapping around surface roughness on a 4H-SiC wafer

〇Keisuke Nagaya¹, Takashi Hirayama¹, Masashi Kato¹ (1.Nagoya Inst. Tech.)

3:30 PM - 3:45 PM

[11p-70A-10] Observation of a short lifetime layer by buried N/V co-doping in 4H-SiC

〇Keisuke Nagaya¹, Takashi Hirayama¹, Takeshi Tawara^2,3, Koichi Murata⁴, Hidekazu Tsuchida⁴, Masashi Kato¹ (1.Nagoya Inst. Tech., 2.AIST., 3.Fuji Electric Co., Ltd., 4.CRIEPI.)

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