[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

▲ [9a-PB3-11] Influence of biaxial stress on the electron transport properties at SiO2/4H-SiC interfaces

〇(D)WEI FU¹, Akiko Ueda², Hiroshi Yano¹, Shinsuke Harada², Takeaki Sakurai¹ (1.Tsukuba Univ., 2.AIST)

Keywords:interface of SiC-MOS, strain at interface, electron mobility

It is known that stress of lattice usually causes the modification of the effective mass and/or variations of the scattering rate, which affects the carrier transport. However, the relationship between the biaxial stress at SiO2/4H-SiC interface and the electron mobility is still unclear. As we know, due to the potential disturbances induced by the lattice vibration, the stress-induced electron transport is mainly limited by phonon scattering. Thus, in this work, the phonon limited electron mobility was calculated based on the acoustic and optical phonon scattering.