[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[9a-PB3-12] Effect of Mechanical Uniaxial Stress on Mobility in 4H-SiC(0001) MOSFET

〇Wakana Takeuchi^1,2, Katsuhiro Kutsuki³, Eiji Kagoshima⁴, Toru Onishi⁴, Shinya Iwasaki⁴, Mitsuo Sakashita², Hirokazu Fujiwara⁴, Osamu Nakatsuka² (1.Aichi institute of tech., 2.Nagoya Univ, 3.Toyota Central R&D LABS., INC, 4.TOYOTA MOTOR CORP.)

Keywords:4H-SiC, Mobility, Uniaxial Stress