The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)

Tetsuo Hatakeyama(Toyama Pref. Univ.)

10:45 AM - 11:00 AM

△ [11a-70A-7] Dependence of interface-state-density distribution on doping concentration of p-body
in SiC MOSFETs

〇Koji Ito1, Takuma Kobayashi1, Masahiro Horita1,2, Jun Suda1,2, Tsunenobu Kimoto1 (1.Kyoto Univ., 2.Nagoya Univ.)

Keywords:SiC, MOS, MOSFET