[11a-M101-1~11] CS.9 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

▲ [11a-M101-2] Spin Hall magnetoresistance in amorphous tungsten/iron-silicon alloy bilayers

Lukasz Pawliszak^1,2, 〇Seiji Mitani^2,3, Shinji Isogami², Masamitsu Hayashi^2,4, Tadeusz Kulik¹ (1.Warsaw Univ. Tech., 2.NIMS, 3.Univ. Tsukuba, 4.Univ. Tokyo)

Keywords:Spin Hall magnetoresistance

We investigated spin Hall magnetoresiatnce in amorphous W/FeSi bilayers. The SMR obtained for a W(3nm)/FeSi(3nm) bilayer reached 0.8%, which was a little smaller than that of W/CoFeB. In fact, a theoretical model analysis for the FeSi layer thickness dependence of SMR revealed that the magnetoresistance obtained was a sum of 0.7% SMR and 0.1% unconventional anisotropic magnetoresistance (AMR). The latter occurred as a bulk contribution (i.e., independent of the thickness of FeSi) in the SMR measurement geometry.