9:45 AM - 10:00 AM
▲ [11a-M113-4] Electrical readout of diamond MEMS resonators
Keywords:MEMS, diamond
Diamond owns the outstanding properties such as the highest Young’s modulus, mechanical hardness, thermal conductivity, and chemical resistance for microelectromechanical or nanoelectromechanical systems (MEMS/NEMS) applications with markedly improved performance and reliability. Silicon-based MEMS has witnessed the broad applications such as pressure/tactile sensors, accelerometers, and gyroscope, to name a few, in our daily life ranging from health management, automobile, to communication. The progress in silicon MEMS is no doubt attributed to the compatibility of silicon MEMS with CMOS process, in which the electrical readout of the MEMS resonators is the key step. Despite the attractive properties of diamond for MEMS/NEMS, there is an intrinsic drawback of diamond for MEMS, lacking of shallow dopants for sufficient electrical conductivity. Therefore, the electrical readout of diamond MEMS/NEMS resonators cannot be as usual as conventional semiconductors.
In this work, we aim to achieve on-chip electrical readout of SCD resonators by using nano-thick metal electrodes with imposing little energy dissipation. Intrinsic SCD cantilevers fabricated via the IPT method were adopted to demonstrate the on-chip readout. Source-drain (S-D) electrodes were deposited on the cantilevers for electrical readout of the resonance and the cantilevers were actuated by the piezo-ceramics disk placed at the bottom of the diamond substrate. A heterodyne frequency down-conversion method was utilized to characterize the resonance frequency of the SCD cantilevers. It is shown that the readout amplitude can be tailored by the actuation rf amplitude. It was also revealed that both the resonance frequency and amplitude can be tuned by the S-D rf amplitude. This work provides a step for integrated diamond MEMS sensors.
In this work, we aim to achieve on-chip electrical readout of SCD resonators by using nano-thick metal electrodes with imposing little energy dissipation. Intrinsic SCD cantilevers fabricated via the IPT method were adopted to demonstrate the on-chip readout. Source-drain (S-D) electrodes were deposited on the cantilevers for electrical readout of the resonance and the cantilevers were actuated by the piezo-ceramics disk placed at the bottom of the diamond substrate. A heterodyne frequency down-conversion method was utilized to characterize the resonance frequency of the SCD cantilevers. It is shown that the readout amplitude can be tailored by the actuation rf amplitude. It was also revealed that both the resonance frequency and amplitude can be tuned by the S-D rf amplitude. This work provides a step for integrated diamond MEMS sensors.