[11a-M113-1~11] 6.2 Carbon-based thin films

[11a-M113-3] Characterization of dislocation in homoepitaxial diamond by using 2D Raman mapping

〇(PC)Kimiyoshi Ichikawa¹, Tokuyuki Teraji¹, Takehiro Shimaoka¹, Yukako Kato², Satoshi Koizumi¹ (1.NIMS, 2.AIST)

Keywords:Diamond film, Dislocation, Raman Spectroscopy

Dislocation in semiconductor is harmful for the desired properties and limits the applications as a material. We have reported characteristic defects in leaky diamond Schottky barrier diodes by using Cathodoluminescence mapping. For revealing the defects induced leakage current in power device, it is important to characterize the defects from several perspectives. Recently, confocal Raman imaging has attention as a non-destructive tool to visualize dislocation in other materials. A few study on Raman imaging in diamond reported in detail. In this study, we characterized dislocations in homoepitaxial diamond by using confocal Raman imaging. Dislocation in diamond can be detected as the pairs of compressive and tensile strain by Raman mapping measurement. Confocal Raman imaging can obtain the information about propagation and Burgers vector of dislocation in homoepitaxial diamond and substrate.