[11a-PB1-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[11a-PB1-3] Mechanism of Si chemical etching assisted by graphene oxide

〇Wataru Kubota¹, Ishizuka Ryuko¹, Utsunomiya Toru¹, Ichii Takashi¹, Sugimura Hiroyuki¹ (1.Kyoto Univ.)

Keywords:semiconductor, Graphene Oxide, etching

Nanostructure of Si, which is one of the most important semiconductor materials, is receiving a lot of attention as application of nanoelectronics,sensor and solar energy conversion. We have reported chemical etching of Si assisted by graphene oxide(GO). In this study, by utilizing two types of graphene oxide which have different structure, analysis of mechanism of Si chemical etching assisted by GO is performed. Consequently, Si is etched deeper by GO with fewer defects. This result implies that graphene like structure in graphene oxide can catalyze better than that at oxidized domain.