Oral presentation

[10a-W934-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 10, 2019 9:00 AM - 12:00 PM W934 (W934)

Koichiro Saga(Sony), Takashi Hasunuma(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-W934-1] Reaction region of deoxidization on Si(110)

〇Masahiro Yano¹, Tomoo Terasawa¹, Shinichi Machida¹, Satoshi Yasuda¹, Hidehito Asaoka¹ (1.ASRC JAEA)

9:15 AM - 9:30 AM

▲ [10a-W934-2] Oxidation-induced shrink of Si-Si bond

〇ShuJun YE¹, Kikuo YAMABE¹, Tetsuo ENDOH¹ (1.Tohoku Univ.)

9:30 AM - 9:45 AM

[10a-W934-3] Si substrate orientation dependence on MIS diode with HfO₂ thin films

〇(M1)Yusuke Horiuchi¹, Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

9:45 AM - 10:00 AM

△ [10a-W934-4] Fabrication process dependence on Hf-based MONOS NVM

〇(P)Sohya Kudoh¹, Shin Ishimatsu¹, Yusuke Horiuchi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

10:00 AM - 10:15 AM

▼ [10a-W934-5] Molecular Dynamics Simulation of SiO₂Substrate Etching by NF₂⁺ and C₂F₅⁺ ions

〇(D)ErinJoy Capdos Tinacba¹, Michiro Isobe¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

10:30 AM - 10:45 AM

△ [10a-W934-6] Characterizations of Electron Field Emission and Kinetic Energy of Emitted Electrons from Multiply-Stacked Structures consisting of Ge-Core Si Quantum Dots and Si Quantum Dots

〇(M2)Yuto Futamura¹, Katsunori Makihara¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

10:45 AM - 11:00 AM

[10a-W934-7] Effect of B-doping on Photoluminescence Properties of Si-QDs with Ge Core

〇Ryo Nagai¹, Shuntaro Fujimori¹, Takuya Maehara¹, Mitsuhisa Ikeda¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

11:00 AM - 11:15 AM

△ [10a-W934-8] High-Field Electron Transport Analysis Based on The Barker-Ferry Equation

〇(M2)Shintaro Makihira¹, Nobuya Mori¹ (1.Osaka Univ.)

11:15 AM - 11:30 AM

[10a-W934-9] [Young Scientist Presentation Award Speech] Fundamental Properties of Graphene-Assisted Chemical Etching of Semiconductor Surface

〇Tomoki Hirano¹, Yuki Nakata¹, Hiroto Yamashita¹, Shaoxian Li¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

△ [10a-W934-10] Changing the Water-repellent of Defect-free and Ordered Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

〇(B)Sou Takeuchi¹, Daisuke Ohori¹, Teruhisa Ishida², Mami Tanaka², Masahiro Sota², Seiji Samukawa^1,3 (1.IFS, Tohoku Univ., 2.NAGASE & CO., LTD., 3.AIMR, Tohoku Univ.)

11:45 AM - 12:00 PM

[10a-W934-11] Surface Structure Chemical Transfer Method to Fabricate Fixed Abrasive Multi-Si with Low Reflectance and Low Interface State Density

〇(D)Shogo Kunieda^1,2, Kentaro Imamura^1,2, Hikaru Kobayashi^1,2 (1.ISIR Osaka Univ., 2.CREST-JST)

Oral presentation

[10p-W934-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 10, 2019 1:30 PM - 4:45 PM W934 (W934)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[10p-W934-1] Evaluation of ultra low density metal contamination by Pulse Photoconductivity Method

〇YUUKI KUMAGAE¹, Shotaro Kuzukawa¹, Matsuyama Hiroki¹, Abe Narumi¹, Shimazu Yuichiro¹, Nagatomo Kotaro², Nakayama Yusuke², Nakamura Shunsuke², Kobayashi Kazuhiro¹, Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka Masao² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

1:45 PM - 2:00 PM

[10p-W934-2] Development of noncontact multi-measurement using Pulse Photoconductive Method

〇Shotaro Kuzukawa¹, Hiroki Matsuyama¹, Narumi Abe¹, Yuki Kumagae¹, Yuichiro Shimazu¹, Kotaro Nagatomo², Shunsuke Nakamura², Yusuke Nakayama², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ.)

2:00 PM - 2:15 PM

[10p-W934-3] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Hiroki Matsuyama¹, Shotaro Kuzukawa¹, Narumi Abe¹, Yuki Kumagae¹, Yusuke Nakayama², Shunsuke Nakamura², Kotaro Nagatomo², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.Graduate school of science and technology Kumamoto Univ., 2.Kumamoto Univ.)

2:15 PM - 2:30 PM

[10p-W934-4] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Narumi Abe¹, Shotaro Kuzukawa¹, Hiroki Matsuyama¹, Yuki Kumagae¹, Yusuke Nakayama², Shunsuke Nakamura², Kotaro Nagatomo², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

2:45 PM - 3:00 PM

[10p-W934-5] Scalability Study on Ferroelectric-HfO₂ Tunnel Junction Memory

〇FEI MO¹, Tagawa yusaku¹, Saraya Takuya¹, Hiramoto Toshiro¹, Kobayashi Masaharu¹ (1.IIs, univ. of Tokyo)

3:00 PM - 3:15 PM

[10p-W934-6] NEGF Simulation of Inter-layer Tunneling under Finite Bias

〇(M1)Takaya Mishima¹, Hajime Tanaka¹, Futo Hashimoto¹, Nobuya Mori¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM

[10p-W934-7] Domain Divided Device Simulation with Flexible Boundary Conditions

〇Kazuya Matsuzawa¹, Masatoshi Abe¹, Yoshinori Oda¹, Takahisa Tanaka^1,2, Ken Uchida^1,2 (1.TRDEC, Keio Univ., 2.Elec.Eng. Keio Univ.)

3:30 PM - 3:45 PM

[10p-W934-8] Heavy ion induced transient current of PN-Body Tied SOIFET

〇Ryota Furukawa¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ)

3:45 PM - 4:00 PM

△ [10p-W934-9] Development of dynamic deterioration model of MOSFET under TID effect

〇Yuta Oshima¹, Motoki Ando¹, Kenji Hirakawa¹, Masayuki Iwase¹, Munehiro Ogasawara¹, Takashi Yoda¹, Noboru Ishihara¹, Hiroyuki Ito¹ (1.Tokyo Tech.)

4:00 PM - 4:15 PM

[10p-W934-10] Impact of Electron Drag Effects on Thermal Transport in 1D Nanostructures

〇(M2C)Yuma Kajiwara¹, Nobuya Mori¹ (1.Osaka Univ.)

4:15 PM - 4:30 PM

[10p-W934-11] Strain Effects on Ballistic Phonon Thermal Transport in Finite-Length Silicon Nanowires

〇Junichi Hattori¹ (1.AIST)

4:30 PM - 4:45 PM

[10p-W934-12] Temperature control of clean room by simulation and virtual metrology

〇Haruki Kai¹, Kumagae Yuki¹, Abe Narumi¹, Iwamura Ko², Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka Masao² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

Poster presentation

[11a-PB1-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Mon. Mar 11, 2019 9:30 AM - 11:30 AM PB1 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[11a-PB1-1] Characterization of Electron Field Emission from Multiply-Stacked Si-QDs/SiO₂ Structures

〇Tatsuya Takemoto¹, Yuto Futamura¹, Katsunori Makihara¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Seiishi Miyazaki¹ (1.Nagoya Univ.)

9:30 AM - 11:30 AM

[11a-PB1-2] Ellipsometry study of crystalline-Si/perovskite tandem structure solar cells

〇(M1)Koki Kawamura¹, Yuki Nasuno¹, Ryo Ishikawa¹, Hajime Shirai¹ (1.Saitama Univ.)

9:30 AM - 11:30 AM

[11a-PB1-3] Mechanism of Si chemical etching assisted by graphene oxide

〇Wataru Kubota¹, Ishizuka Ryuko¹, Utsunomiya Toru¹, Ichii Takashi¹, Sugimura Hiroyuki¹ (1.Kyoto Univ.)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10a-W934-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10a-W934-1] Reaction region of deoxidization on Si(110)

▲ [10a-W934-2] Oxidation-induced shrink of Si-Si bond

[10a-W934-3] Si substrate orientation dependence on MIS diode with HfO₂ thin films

△ [10a-W934-4] Fabrication process dependence on Hf-based MONOS NVM

▼ [10a-W934-5] Molecular Dynamics Simulation of SiO₂Substrate Etching by NF₂⁺ and C₂F₅⁺ ions

△ [10a-W934-6] Characterizations of Electron Field Emission and Kinetic Energy of Emitted Electrons from Multiply-Stacked Structures consisting of Ge-Core Si Quantum Dots and Si Quantum Dots

[10a-W934-7] Effect of B-doping on Photoluminescence Properties of Si-QDs with Ge Core

△ [10a-W934-8] High-Field Electron Transport Analysis Based on The Barker-Ferry Equation

[10a-W934-9] [Young Scientist Presentation Award Speech] Fundamental Properties of Graphene-Assisted Chemical Etching of Semiconductor Surface

△ [10a-W934-10] Changing the Water-repellent of Defect-free and Ordered Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

[10a-W934-11] Surface Structure Chemical Transfer Method to Fabricate Fixed Abrasive Multi-Si with Low Reflectance and Low Interface State Density

[10p-W934-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-W934-1] Evaluation of ultra low density metal contamination by Pulse Photoconductivity Method

[10p-W934-2] Development of noncontact multi-measurement using Pulse Photoconductive Method

[10p-W934-3] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

[10p-W934-4] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

[10p-W934-5] Scalability Study on Ferroelectric-HfO₂ Tunnel Junction Memory

[10p-W934-6] NEGF Simulation of Inter-layer Tunneling under Finite Bias

[10p-W934-7] Domain Divided Device Simulation with Flexible Boundary Conditions

[10p-W934-8] Heavy ion induced transient current of PN-Body Tied SOIFET

△ [10p-W934-9] Development of dynamic deterioration model of MOSFET under TID effect

[10p-W934-10] Impact of Electron Drag Effects on Thermal Transport in 1D Nanostructures

[10p-W934-11] Strain Effects on Ballistic Phonon Thermal Transport in Finite-Length Silicon Nanowires

[10p-W934-12] Temperature control of clean room by simulation and virtual metrology

[11a-PB1-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[11a-PB1-1] Characterization of Electron Field Emission from Multiply-Stacked Si-QDs/SiO₂ Structures

[11a-PB1-2] Ellipsometry study of crystalline-Si/perovskite tandem structure solar cells

[11a-PB1-3] Mechanism of Si chemical etching assisted by graphene oxide

Authentication

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10a-W934-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

▲ [10a-W934-2] Oxidation-induced shrink of Si-Si bond

△ [10a-W934-4] Fabrication process dependence on Hf-based MONOS NVM

▼ [10a-W934-5] Molecular Dynamics Simulation of SiO2 Substrate Etching by NF2+ and C2F5+ ions

△ [10a-W934-6] Characterizations of Electron Field Emission and Kinetic Energy of Emitted Electrons from Multiply-Stacked Structures consisting of Ge-Core Si Quantum Dots and Si Quantum Dots

△ [10a-W934-8] High-Field Electron Transport Analysis Based on The Barker-Ferry Equation

△ [10a-W934-10] Changing the Water-repellent of Defect-free and Ordered Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

[10p-W934-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [10p-W934-9] Development of dynamic deterioration model of MOSFET under TID effect

[11a-PB1-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Authentication

▼ [10a-W934-5] Molecular Dynamics Simulation of SiO₂Substrate Etching by NF₂⁺ and C₂F₅⁺ ions