[10a-W934-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10a-W934-3] Si substrate orientation dependence on MIS diode with HfO₂ thin films

〇(M1)Yusuke Horiuchi¹, Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:HfO2 thin films, Si substrate orientation dependence, Interface state density

This paper investigated Si substrate orientation dependence on MIS diode with HfO₂ thin films used as the tunneling layer in Hf-based MONOS nonvolatile memory reported before. The V_FB shift of Al/HfN_0.5/HfO₂/Si MIS diodes extracted from C-V characteristics was found to be -0.99 V for p-Si(100) substrate, -1.02 V for p-Si(110) substrate, and -0.85 V for p-Si(111) substrate respectively, and the leakage current and the interface state density of p-Si(100) substrate and p-Si(110) substrate which are important for the 3-dimensional structure devices were found to be almost same values.