Fabrication process dependence on Hf-based MONOS NVM

Sohya Kudoh; Shin Ishimatsu; Yusuke Horiuchi; Shun-ichiro Ohmi

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10a-W934-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 10, 2019 9:00 AM - 12:00 PM W934 (W934)

Koichiro Saga(Sony), Takashi Hasunuma(Univ. of Tsukuba)

9:45 AM - 10:00 AM

△ [10a-W934-4] Fabrication process dependence on Hf-based MONOS NVM

〇(P)Sohya Kudoh¹, Shin Ishimatsu¹, Yusuke Horiuchi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

Keywords:nonvolatile memory, Hf, ECR plasma sputtering

The memory characteristics of diodes and MISFET with Hf-based MONOS gate stack structure were investigated in our previous reports. In this study, the fabrication process dependence on Hf-based MONOS device was investigated.